Philips Semiconductors
Product specification
Complementary enhancement mode
MOS transistors
PHC2300
MDA237
MDA236
160
160
handbook, halfpage
handbook, halfpage
C
(pF)
C
(pF)
120
80
120
80
C
iss
C
iss
40
40
C
C
oss
oss
C
C
rss
rss
0
0
0
0
5
10
15
20
25
(V)
−5
−10
−15
−20
−25
(V)
V
V
DS
DS
f = 1 MHz; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.12 Capacitance as a function of drain-source
voltage; N-channel typical values.
Fig.13 Capacitance as a function of drain-source
voltage; P-channel typical values.
MDA242
MDA243
12
12
50
V
50
V
handbook, halfpage
V
handbook, halfpage
V
GS
(V)
GS
(V)
DS
DS
(V)
(V)
10
10
40
40
35
30
35
30
8
6
8
6
25
20
15
10
5
25
20
15
10
5
(1)
(1)
(2)
(2)
4
2
4
2
0
0
0
0
Q
(pC)
Q
(pC)
G
G
VDD = 50 V; ID = 170 mA; Tamb = 25 °C.
(1) VDS
(2) VGS.
VDD = −50 V; ID = −115 mA; Tamb = 25 °C.
(1) VDS
(2) VGS.
.
.
Fig.14 Gate-source voltage and drain-source voltage
as a function of total gate charge;
Fig.15 Gate-source voltage and drain-source
voltage as a function of total gate charge;
P-channel typical values.
N-channel typical values.
1997 Oct 24
9
NXP [ NXP ]
