欢迎访问ic37.com |
会员登录 免费注册
发布采购

PCA8581P 参数 Datasheet PDF下载

PCA8581P图片预览
型号: PCA8581P
PDF下载: 下载PDF文件 查看货源
内容描述: 128 ×8位EEPROM,带有I2C总线接口 [128 x 8-bit EEPROM with I2C-bus interface]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 20 页 / 135 K
品牌: NXP [ NXP ]
 浏览型号PCA8581P的Datasheet PDF文件第6页浏览型号PCA8581P的Datasheet PDF文件第7页浏览型号PCA8581P的Datasheet PDF文件第8页浏览型号PCA8581P的Datasheet PDF文件第9页浏览型号PCA8581P的Datasheet PDF文件第11页浏览型号PCA8581P的Datasheet PDF文件第12页浏览型号PCA8581P的Datasheet PDF文件第13页浏览型号PCA8581P的Datasheet PDF文件第14页  
Philips Semiconductors  
Product specification  
128 × 8-bit EEPROM with I2C-bus interface  
PCA8581; PCA8581C  
10 DC CHARACTERISTICS  
VDD = 2.5 to 6.0 V (PCA8581C); VDD = 4.5 to 5.5 V (PCA8581); VSS = 0 V; Tamb = 25 to +85 °C; note 1; unless  
otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Supply  
VDD  
supply voltage  
PCA8581C  
PCA8581  
2.5  
6.0  
V
V
4.5  
5.5  
IDD  
supply current  
standby mode  
during read cycle  
during write cycle  
f
SCL = 0 Hz; VIL = 0 V; VIH = VDD  
10  
µA  
µA  
µA  
fSCL = 100 Hz; VIL = 0 V; VIH = VDD  
VIL = 0 V; VIH = VDD  
400  
1000  
Inputs A0, A1, A2, SDA and SCL  
VIL  
VIH  
ILI  
LOW level input voltage  
HIGH level input voltage  
input leakage current  
input capacitance  
0.3VDD  
V
0.7VDD  
1
7
V
VI = VDD or VSS  
VI = VSS  
µA  
pF  
Ci  
Output SDA  
IOL  
LOW level output current VOL = 0.4 V  
3
mA  
Erase/write data  
tWR  
write time  
data retention time  
7
10  
ms  
tRET  
10  
years  
Note  
1. The PCA8581C is guaranteed to be programmed with all locations ‘FF’ (hexadecimal) provided the device has been  
stored within the temperature limits 65 to +85 °C.  
1997 Apr 02  
10  
 复制成功!