NTAG213F/216F
NXP Semiconductors
NFC Forum T2T IC with 144/888 bytes user memory and field detection
11. Limiting values
Stresses exceeding one or more of the limiting values can cause permanent damage to
the device. Exposure to limiting values for extended periods can affect device reliability.
Table 41. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
II
Parameter
Min
-
Max
40
Unit
mA
mW
V
input current
Ptot
total power dissipation
Voltage on the Field Detection pin
storage temperature
-
120
4,6
125
-
VFD pin
Tstg
-0,5
55
2
C
[1]
VESD
electrostatic discharge voltage for all
pads
kV
[1] ANSI/ESDA/JEDEC JS-001; Human body model: C = 100 pF, R = 1.5 k
12. Characteristics
Table 42. Characteristics
Symbol
Ci
Parameter
Conditions
Min
-
Typ
Max
-
Unit
input capacitance
input frequency
ambient temperature
50.0
pF
MHz
°C
fi
-
13.56
-
Tamb
VIL, FDpin
-25
-0,3
70
0,7
LOW-level input
voltage on FD-pin for
sleep mode detection
0
0
V
VIH, FDpin
HIGH-level input
voltage on FD-pin for
sleep mode detection
1,2
3,6
V
V
VOL, FD pin LOW-level out put
voltage on FD-pin
Io = 50A
0,05
Io = 4mA
Io = 8mA
0,35
0,8
0,5
1,2
V
V
EEPROM characteristics
tret
retention time
Tamb = 22 C
Tamb = 22 C
10
-
-
-
-
year
Nendu(W)
write endurance
100.000
cycle
NTAG213F_216F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 28 August 2013
262231
48 of 56
NXP [ NXP ]
