NTAG213F/216F
NXP Semiconductors
NFC Forum T2T IC with 144/888 bytes user memory and field detection
Table 34. COMPATIBILITY_WRITE timing
These times exclude the end of communication of the NFC device.
TACK/NAK min
n=9[1]
n=9[1]
TACK/NAK max
TTimeOut
TTimeOut
TTimeOut
5 ms
COMPATIBILITY_WRITE part 1
COMPATIBILITY_WRITE part 2
10 ms
[1] Refer to Section 9.2 “Timings”.
In the initial state of NTAG21xF, the following memory pages are valid Addr parameters to
the COMPATIBILITY_WRITE command.
• page address 00h to 2Ch for NTAG213F
• page address 00h to E6h for NTAG216F
Addressing a memory page beyond the limits above results in a NAK response from
NTAG21xF.
Pages which are locked against writing cannot be reprogrammed using any write
command. The locking mechanisms include static and dynamic lock bits as well as the
locking of the configuration pages.
The following conditions apply if part of the memory is password protected for write
access:
• if NTAG21xF is in the ACTIVE state
– writing to a page which address is equal or higher than AUTH0 results in a NAK
response
• if NTAG21xF is in the AUTHENTICATED state
– the COMPATIBILITY_WRITE command behaves the same as on a NTAG21xF
without access protection
NTAG21xF features tearing protected write operations to specific memory content. The
following pages are protected against tearing events during a COMPATIBILITY_WRITE
operation:
• page 2 containing static lock bits
• page 3 containing CC bits
• page 28h containing the additional dynamic lock bits for the NTAG213F
• page E2h containing the additional dynamic lock bits for the NTAG216F
NTAG213F_216F
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Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 28 August 2013
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