NTAG213F/216F
NXP Semiconductors
NFC Forum T2T IC with 144/888 bytes user memory and field detection
8.5 Memory organization
The EEPROM memory is organized in pages with 4 bytes per page. NTAG213F variant
has 45 pages and NTAG216F variant has 231 pages in total. The memory organization
can be seen in Figure 6 and Figure 7, the functionality of the different memory sections is
described in the following sections.
Page Adr
Byte number within a page
Dec Hex
0
1
2
3
Description
0
1
0h
1h
serial number
serial number
Manufacturer data and
static lock bytes
2
2h
serial number
internal
lock bytes
lock bytes
3
3h
Capability Container (CC)
Capability Container
4
4h
5
5h
...
38
39
40
41
42
43
44
...
user memory
User memory pages
26 h
27 h
28 h
29 h
2Ah
2Bh
2Ch
dynamic lock bytes
RFUI
Dynamic lock bytes
Configuration pages
CFG 0
CFG 1
PWD
PACK
RFUI
aaa-008087
Fig 6. Memory organization NTAG213F
Page Adr
Byte number within a page
Dec Hex
0
1
2
3
Description
0
1
2
3
4
5
...
0h
1h
2h
3h
4h
5h
...
serial number
serial number
Manufacturer data and
static lock bytes
serial number
internal
lock bytes
lock bytes
Capability Container (CC)
Capability Container
user memory
User memory pages
224 E0h
225 E1h
226 E2h
227 E3h
228 E4h
229 E5h
230 E6h
dynamic lock bytes
RFUI
Dynamic lock bytes
Configuration pages
CFG 0
CFG 1
PWD
PACK
RFUI
aaa-008089
Fig 7. Memory organization NTAG216F
The structure of manufacturing data, static lock bytes, capability container and user
memory pages (except of the user memory length) are compatible to NTAG203F.
NTAG213F_216F
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© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 28 August 2013
262231
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