Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS
TM
transistor
IRFZ44N
100
16
10
9
8.5
30
VGS/V =
8.0
7.5
ID/A
80
gfs/S
25
20
60
7.0
15
6.5
40
6.0
20
10
5.5
5.0
4.5
10
4.0
5
0
0
0
2
4
VDS/V
6
8
0
20
40
ID/A
60
80
100
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
RDS(ON)/mOhm
VGS/V =
6
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
BUK959-60
40
2.5
a
Rds(on) normlised to 25degC
35
2
30
6.5
7
25
8
20
9
10
1.5
1
15
10
0
10
20
30
40
ID/A
50
60
70
80
90
0.5
-100
-50
0
50
Tmb / degC
100
150
200
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
100
ID/A
80
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 10 V
VGS(TO) / V
max.
4
typ.
BUK759-60
5
60
3
min.
40
2
20
Tj/C =
0
175
25
1
0
2
4
6
VGS/V
8
10
12
0
-100
-50
0
50
Tj / C
100
150
200
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
February 1999
4
Rev 1.000
PHILIPS [ NXP SEMICONDUCTORS ]
