Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
Source-Drain Diode Current, IF (A)
10
9
8
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
175 C
Tj = 25 C
VGS = 0 V
10
Maximum Avalanche Current, I
AS
(A)
25 C
1
Tj prior to avalanche = 150 C
0.1
0.001
0.01
0.1
Avalanche time, t
AV
(ms)
1
10
Fig.13. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.14. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
August 1999
6
Rev 1.100