Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
Drain current, ID (A)
10
9
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gate-source voltage, VGS (V)
175 C
Tj = 25 C
VDS > ID X RDS(ON)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Threshold Voltage, VGS(TO) (V)
maximum
typical
minimum
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Tj = 25 C
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Drain current, ID (A)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1.0E-01
1.0E-02
175 C
1.0E-03
minimum
typical
1.0E-04
maximum
1.0E-05
1.0E-06
0
1
2
3
4
5
6
Drain current, ID (A)
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
Gate-source voltage, VGS (V)
4
4.5
5
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60
-40
-20
0
20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
1000
Coss
100
Crss
10
0.1
1
10
Drain-Source Voltage, VDS (V)
100
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
August 1999
5
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
