Philips Semiconductors
Product specification
Hex inverter
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
°C;
C
L
= 50 pF; input transition times
≤
20 ns
V
DD
V
Propagation delays
I
n
→
O
n
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
5
10
15
5
10
15
5
10
15
5
LOW to HIGH
10
15
t
TLH
t
THL
t
PLH
t
PHL
SYMBOL
TYP. MAX.
45
20
15
40
20
15
60
30
20
60
30
20
90 ns
40 ns
25 ns
80 ns
40 ns
30 ns
120 ns
60 ns
40 ns
120 ns
60 ns
40 ns
HEF4069UB
gates
TYPICAL EXTRAPOLATION FORMULA
18 ns
+
(0,55 ns/pF) C
L
9 ns
+
(0,23 ns/pF) C
L
7 ns
+
(0,16 ns/pF) C
L
13 ns
+
(0,55 ns/pF) C
L
9 ns
+
(0,23 ns/pF) C
L
7 ns
+
(0,16 ns/pF) C
L
10 ns
+
(1,0 ns/pF) C
L
9 ns
+
(0,42 ns/pF) C
L
6 ns
+
(0,28 ns/pF) C
L
10 ns
+
(1,0 ns/pF) C
L
9 ns
+
(0,42 ns/pF) C
L
6 ns
+
(0,28 ns/pF) C
L
V
DD
V
Dynamic power
dissipation per
package (P)
5
10
15
TYPICAL FORMULA FOR P (µW)
600 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
4 000 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
22 000 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
where
f
i
= input freq. (MHz)
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑
(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
January 1995
3
PHILIPS [ NXP SEMICONDUCTORS ]
