NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
11. Dynamic characteristics
Table 7.
Dynamic characteristics
T
amb
= 25
C;
C
L
= 50 pF; t
r
= t
f
20 ns; wave forms see
test circuit see
unless otherwise specified.
Symbol Parameter
t
PHL
HIGH to LOW
propagation delay
Conditions
nA or nB to nY
V
DD
5V
10 V
15 V
t
PLH
LOW to HIGH
propagation delay
nA or nB to nY
5V
10 V
15 V
t
THL
HIGH to LOW output
transition time
nY to LOW
5V
10 V
15 V
t
TLH
LOW to HIGH output
transition time
nA or nB to
HIGH
5V
10 V
15 V
[1]
Extrapolation formula
63 ns + (0.55 ns/pF)C
L
29 ns + (0.23 ns/pF)C
L
22 ns + (0.16 ns/pF)C
L
58 ns + (0.55 ns/pF)C
L
29 ns + (0.23 ns/pF)C
L
22 ns + (0.16 ns/pF)C
L
10 ns + (1.00 ns/pF)C
L
9 ns + (0.42 ns/pF)C
L
6 ns + (0.28 ns/pF)C
L
10 ns + (1.00 ns/pF)C
L
9 ns + (0.42 ns/pF)C
L
6 ns + (0.28 ns/pF)C
L
Min
-
-
-
-
-
-
-
-
-
-
-
-
Typ
90
35
30
75
35
30
60
30
20
60
30
20
Max
180
70
60
150
70
60
120
60
40
120
60
40
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (C
L
in pF).
Table 8.
Dynamic power dissipation
V
SS
= 0 V; t
r
= t
f
20 ns; T
amb
= 25
C.
Symbol Parameter
P
D
dynamic power
dissipation
V
DD
5V
10 V
15 V
Typical formula
P
D
= 2300
f
i
+
(f
o
C
L
)
V
DD2
(W)
P
D
= 9000
f
i
+
(f
o
C
L
)
V
DD2
(W)
P
D
= 20000
f
i
+
(f
o
C
L
)
V
DD2
(W)
where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
(f
o
C
L
) = sum of the outputs;
V
DD
= supply voltage in V.
HEF40106B_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 August 2012
5 of 15
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