Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
trr / ns
1000
Qs / nC
100
IF=10A
5A
2A
IF=10A
100
10
1A
10
IF=1A
1.0
1
1
1.0
10
100
10
dIF/dt (A/us)
100
-dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
10
IF=10A
1
1
IF=1A
0.1
0.1
p
t
p
t
P
0.01
D
D =
T
t
T
0.01
0.001
1us
10us 100us 1ms
10ms 100ms
1s
BYV32E
10s
10
100
1
pulse width, tp (s)
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
IF / A
30
Tj=150 C
Tj=25 C
20
10
typ
max
0
0.5
1.5
0
1
VF / V
Fig.9. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
July 1998
4
Rev 1.200
NXP [ NXP ]
