Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
15
PF / W
Vo = 0.7 V
Rs = 0.0183 Ohms
BYV32
Tmb(max) / C
114
D = 1.0
10
0.5
0.2
0.1
126
time
VF
V
VF
time
fr
5
I
t
p
D=
t
p
T
t
138
T
0
0
5
IF(AV) / A
10
150
15
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.7 V
Rs = 0.0183 Ohms
R
10
BYV32
1.9
2.2
Tmb(max) / C
a = 1.57
126
8
2.8
4
130.8
D.U.T.
Voltage Pulse Source
6
135.6
4
140.4
Current
shunt
to ’scope
2
145.2
0
0
2
4
IF(AV) / A
6
8
150
10
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
July 1998
3
Rev 1.200
PHILIPS [ NXP SEMICONDUCTORS ]
