BT151-500R
NXP Semiconductors
SCR, 12 A, 15mA, 500 V, SOT78
003aab829
160
I
TSM
(A)
120
80
40
0
I
I
T
TSM
t
t
p
T initial = 25 °C max
j
2
3
1
10
10
10
number of cycles
Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 6
junction to mounting
base
-
-
1.3
K/W
Rth(j-a)
thermal resistance from
junction to ambient free
air
-
60
-
K/W
001aaa962
10
Z
th(j-mb)
(K/W)
1
−1
10
t
p
P
δ =
T
−2
10
t
t
p
T
−3
10
10
−5
−4
−3
−2
−1
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-500R_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 March 2009
5 of 11
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