NXP Semiconductors
BT151-500RT
SCR
10
3
I
TSM
(A)
003aad204
10
2
(1)
I
T
I
TSM
10
10
-5
t
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
t
p
≤ 10 ms
(1) dI
T
/dt limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min
-
Typ
60
Max
-
Unit
K/W
6. Characteristics
Table 6.
Symbol
I
GT
I
L
I
H
V
T
V
GT
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
Conditions
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C;
V
D
= 12 V; T
j
= 25 °C;
I
T
= 23 A; T
j
= 25 °C;
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
V
D
= 500 V; I
T
= 0.1 A; T
j
= 150 °C;
I
D
I
R
off-state current
reverse current
V
D
= 500 V; T
j
= 150 °C
T
j
= 125 °C; V
R
= 500 V
T
j
= 150 °C; V
R
= 500 V
BT151-500RT
All information provided in this document is subject to legal disclaimers.
Min
-
-
-
-
-
0.25
-
-
-
Typ
2
10
7
1.4
0.6
0.4
0.5
0.1
0.1
Max
15
40
20
1.75
1.5
-
2.5
0.5
0.5
Unit
mA
mA
mA
V
V
V
mA
mA
mA
Static characteristics
© NXP B.V. 2012. All rights reserved
Product data sheet
27 July 2012
5 / 11
PHILIPS [ NXP SEMICONDUCTORS ]
