NXP Semiconductors
BT151-500RT
SCR
Symbol
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
30
2
Parameter
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
Conditions
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
Min
-
-
-
-
-
Max
72
50
4
5
5
1
150
150
003aad206
Unit
A s
A/µs
A
V
W
W
°C
°C
2
over any 20 ms period
-
-40
-
003a a d205
I
T(RMS )
(A)
25
20
15
10
16
I
T(RMS)
(A)
12
133 °C
8
4
5
0
10
-2
10
-1
1
10
s urge duratio n (s )
0
-50
0
50
100
150
T
mb
(°C)
f = 50 Hz; T
mb
= 133 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
BT151-500RT
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© NXP B.V. 2012. All rights reserved
Product data sheet
27 July 2012
3 / 11
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