Philips Semiconductors
Product specification
Thyristors
logic level
BT149 series
IGT(Tj)
IGT(25 C)
BT169
IT / A
5
4
3
2
1
0
BT169
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 1.067 V
Rs = 0.187 ohms
typ
max
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
-50
0
50
100
150
Tj / C
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
BT169
Zth j-lead (K/W)
100
10
BT169
3
2.5
2
1
1.5
1
t
P
D
p
0.1
0.01
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
versus junction temperature Tj, RGK = 1 kΩ.
dVD/dt (V/us)
1000
IH(Tj)
IH(25 C)
BT169
3
2.5
2
100
RGK = 1 kohms
1.5
1
10
0.5
0
1
0
50
100
150
-50
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj, RGK = 1 kΩ.
September 1997
4
Rev 1.200
NXP [ NXP ]
