Philips Semiconductors
Product specification
Thyristors
logic level
BT149 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-lead
Thermal resistance
junction to lead
-
-
60
K/W
Rth j-a
Thermal resistance
junction to ambient
pcb mounted; lead length = 4mm
-
150
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 10 mA; gate open circuit
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
IT = 1 A
VD = 12 V; IT = 10 mA; gate open circuit
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;
gate open circuit
-
50
2
200
6
µA
mA
mA
V
-
IH
-
-
-
2
5
VT
VGT
On-state voltage
Gate trigger voltage
1.2
0.5
0.3
1.35
0.8
-
V
0.2
V
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;
GK = 1 kΩ
-
0.05
0.1
mA
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 2 A; VD = VDRM(max); IG = 10 mA;
dIG/dt = 0.1 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
-
-
-
25
2
-
-
-
V/µs
µs
tgt
tq
100
µs
September 1997
2
Rev 1.200
NXP [ NXP ]
