NXP Semiconductors
BT138-600E
4Q Triac
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
-
-
2.5
4
5
11
-
10
10
10
25
30
40
30
40
mA
mA
mA
mA
mA
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
-
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
-
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
-
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
-
-
-
-
30
1.65
1
mA
V
VT
VGT
on-state voltage
gate trigger voltage
1.4
0.7
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
0.25
-
0.4
0.1
-
V
ID
off-state current
VD = 600 V; Tj = 125 °C
0.5
mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 402 V; Tj = 125 °C; (VDM = 67%
-
-
150
2
-
-
V/µs
µs
voltage
of VDRM); exponential waveform; gate
open circuit
tgt
gate-controlled turn-on ITM = 16 A; VD = 600 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs
BT138-600E
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Product data sheet
30 August 2013
7 / 13
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