NXP Semiconductors
BT138-600E
4Q Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
600
12
Unit
V
repetitive peak off-state voltage
RMS on-state current
-
-
IT(RMS)
full sine wave; Tmb ≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3
A
ITSM
non-repetitive peak on-state
current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
-
-
95
A
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
105
I2t
I2t for fusing
A2s
tp = 10 ms; sine-wave pulse
-
-
45
50
dIT/dt
rate of rise of on-state current
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+
A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G-
-
-
-
50
50
10
A/µs
A/µs
A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G-
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+
IGM
peak gate current
peak gate power
-
2
A
PGM
PG(AV)
Tstg
Tj
-
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
150
125
-40
-
BT138-600E
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Product data sheet
30 August 2013
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