Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136 series E
IT / A
IGT(Tj)
IGT(25 C)
12
10
8
Tj = 125 C
Tj = 25 C
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
Vo = 1.27 V
Rs = 0.091 ohms
2.5
2
6
1.5
1
4
2
0.5
0
0
0
0.5
1
1.5
VT / V
2
2.5
3
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Zth j-mb (K/W)
10
IL(Tj)
IL(25 C)
3
unidirectional
2.5
2
bidirectional
1
1.5
1
t
P
D
0.1
p
t
0.5
0
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
versus junction temperature Tj.
dVD/dt (V/us)
1000
IH(Tj)
IH(25C)
3
2.5
2
100
10
1
1.5
1
0.5
0
-50
0
50
100
150
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj.
June 2001
4
Rev 1.400
NXP [ NXP ]
