Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136 series E
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
full cycle
-
-
-
-
-
60
3.0
3.7
-
K/W
K/W
K/W
junction to mounting base half cycle
Rth j-a
Thermal resistance
junction to ambient
in free air
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
2.5
4.0
5.0
11
10
10
10
25
mA
mA
mA
mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
3.0
10
15
20
mA
mA
mA
mA
mA
V
V
V
mA
-
-
2.5
4.0
2.2
1.4
0.7
0.4
0.1
15
-
20
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 5 A
-
15
-
1.70
1.5
-
VD = 12 V; IT = 0.1 A
-
0.25
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
-
-
50
2
-
-
V/µs
µs
June 2001
2
Rev 1.400
NXP [ NXP ]
