Philips Semiconductors
Product specification
Triacs
sensitive gate
BT136 series E
Ptot / W
8
Tmb(max) / C
IT(RMS) / A
101
104
107
110
113
116
119
122
125
5
4
3
2
1
0
7
107 C
= 180
120
1
6
5
4
3
2
1
0
90
60
30
0
1
2
3
4
5
-50
0
50
Tmb / C
100
150
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
IT(RMS) / A
12
ITSM / A
1000
I
TSM
time
I
T
10
8
T
Tj initial = 25 C max
100
6
dIT/dt limit
4
T2- G+ quadrant
2
10
10us
0
100us
1ms
T / s
10ms
100ms
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 107˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
BT136
30
25
20
15
10
5
1.6
I
TSM
time
I
T
1.4
1.2
1
T
Tj initial = 25 C max
0.8
0.6
0.4
0
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
June 2001
3
Rev 1.400
NXP [ NXP ]
