Philips Semiconductors
Product specification
NPN switching transistor
BSR17A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
MIN. MAX. UNIT
ICBO
collector cut-off current
−
−
−
50
5
nA
µA
nA
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 6 V
IEBO
hFE
emitter cut-off current
DC current gain
50
VCE = 1 V; note 1; see Fig.2
IC = 0.1 mA
60
80
100
60
30
−
−
IC = 1 mA
−
IC = 10 mA
300
−
IC = 50 mA
IC = 100 mA
−
VCEsat
collector-emitter saturation voltage
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IC = 10 mA; IB = 1 mA; note 1
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
200
200
850
950
4
mV
mV
mV
mV
pF
−
VBEsat
650
−
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
−
−
8
pF
300
−
−
MHz
dB
F
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
5
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); see Fig.3
ton
td
tr
turn-on time
delay time
rise time
ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA
−
−
−
−
−
−
65
ns
ns
ns
ns
ns
ns
35
35
toff
ts
turn-off time
storage time
fall time
240
200
50
tf
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 Jun 02
4
NXP [ NXP ]
