Philips Semiconductors
Product specification
NPN switching transistor
BSR17A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
60
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
40
open collector
6
100
200
100
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C
−65
−
°C
Tamb
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jun 02
3
NXP [ NXP ]
