Philips Semiconductors
Product specification
NPN switching transistor
BSR17A
MGD834
160
handbook, full pagewidth
h
FE
120
80
40
0
−2
−1
2
3
10
10
1
10
10
10
I
(mA)
C
VCE = 1 V.
Fig.2 DC current gain; typical values.
V
B
V
C
BB
CC
handbook, full pagewidth
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MLB826
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = −1.9 V; VCC = 3 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
5
1997 Jun 02
NXP [ NXP ]
