Philips Semiconductors
Product specification
NPN switching transistors
BSR13; BSR14
SYMBOL
C
c
f
T
PARAMETER
collector capacitance
transition frequency
BSR13
BSR14
CONDITIONS
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V;
f = 100 MHz
−
MIN.
8
−
−
MAX.
UNIT
pF
MHz
MHz
250
300
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
=
≥
100
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 15
4
PHILIPS [ NXP SEMICONDUCTORS ]
