Philips Semiconductors
Product specification
NPN switching transistors
FEATURES
•
High current (max. 800 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING
TYPE NUMBER
BSR13
BSR14
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
U7∗
U8∗
Top view
handbook, halfpage
BSR13; BSR14
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BSR13
BSR14
V
CEO
collector-emitter voltage
BSR13
BSR14
V
EBO
emitter-base voltage
BSR13
BSR14
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
−
−
−
−
−
−
−65
−
−65
5
6
800
800
200
250
+150
150
+150
V
V
mA
mA
mA
mW
°C
°C
°C
open base
−
−
30
40
V
V
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
60
75
V
V
MIN.
MAX.
UNIT
1999 Apr 15
2
PHILIPS [ NXP SEMICONDUCTORS ]
