Philips Semiconductors
Product specification
NPN switching transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BSR13
collector cut-off current
BSR14
I
EBO
emitter cut-off current
BSR13
BSR14
h
FE
DC current gain
I
C
= 0.1 mA; V
CE
= 10 V; note 1
I
C
= 1 mA; V
CE
= 10 V; note 1
I
C
= 10 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; V
CE
= 1 V; note 1
DC current gain
BSR13
BSR14
V
CEsat
collector-emitter saturation voltage
BSR13
BSR14
collector-emitter saturation voltage
BSR13
BSR14
V
BEsat
base-emitter saturation voltage
BSR13
BSR14
base-emitter saturation voltage
BSR13
BSR14
I
C
= 500 mA; I
B
= 50 mA
−
−
I
C
= 150 mA; I
B
= 15 mA
−
0.6
I
C
= 500 mA; I
B
= 50 mA
−
−
I
C
= 150 mA; I
B
= 15 mA
−
−
I
C
= 500 mA; V
CE
= 10 V; note 1
30
40
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
−
−
35
50
75
100
50
−
−
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
j
= 150
°C
−
−
CONDITIONS
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BSR13; BSR14
VALUE
500
UNIT
K/W
MIN.
MAX.
30
10
10
10
30
10
−
−
−
300
−
−
−
400
300
1.6
1
1.3
1.2
2.6
2
UNIT
nA
µA
nA
µA
nA
nA
mV
mV
V
V
V
V
V
V
1999 Apr 15
3
PHILIPS [ NXP SEMICONDUCTORS ]
