Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
SPICE parameters for the BFG591 crystal
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
(1)
20
(1)
21
(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35
(1)
36
(1)
37
(1)
38
Note
1. These parameters have not been extracted, the
default values are shown.
1995 Sep 04
10
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJ
TR
CJS
VJS
MJS
FC
VALUE
1.341
123.5
.988
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
997.2
5.00
1.000
5.00
1.275
920.6
0.000
1.110
3.000
3.821
600.0
348.5
13.60
71.73
10.28
1.929
0.000
1.409
219.4
166.5
2.340
543.7
0.000
750.0
0.000
733.2
−
m
V
A
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
mΩ
−
EV
−
pF
mV
m
ps
−
V
A
deg
pF
mV
m
m
ns
F
mV
−
m
C
be
C
cb
C
ce
L1
L2
L3
L
B
L
E
List of components
(see Fig.15)
DESIGNATION
16
249
0.025
1.19
0.60
1.50
0.50
VALUE
182
QL
B
= 50; QL
E
= 50; QL
B,E
(f) = QL
B,E
√(f/f
c
);
f
c
= scaling frequency = 1 GHz.
E
L3
C be
B
L1
LB
B'
E'
LE
C'
BFG591
UNIT
fA
handbook, halfpage
C cb
L2
C
Cce
MBC964
Fig.15 Package equivalent circuit SOT223.
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
PHILIPS [ NXP SEMICONDUCTORS ]
