Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MRA750
MRA749
1
250
handbook, halfpage
handbook, halfpage
C
re
h
FE
(pF)
0.8
200
150
100
0.6
0.4
0.2
50
0
0
0
−2
−1
2
10
10
1
10
10
4
8
12
I
(mA)
V
(V)
C
CB
VCE = 8 V.
IC = 0; f = 1 MHz.
Fig.4 DC current gain as a function of
collector current; typical values.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
MLC044
12
handbook, halfpage
f
T
(GHz)
V
V
= 8 V
= 4 V
CE
CE
8
4
0
1
2
10
1
10
10
I
(mA)
C
f = 1 GHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
1997 Dec 04
5
NXP [ NXP ]
