Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCES
VEBO
IC
−
−
−
−
−
V
V
V
RBE = 0
15
open collector
2.5
120
500
+150
175
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 85 °C; see Fig.3; note 1
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
VALUE
180
UNIT
K/W
Rth j-s
up to Ts = 85 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T
( C)
s
VCE ≤ 10 V.
Fig.3 Power derating curve.
1997 Dec 04
3
NXP [ NXP ]
