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BFG540W/XR 参数 Datasheet PDF下载

BFG540W/XR图片预览
型号: BFG540W/XR
PDF下载: 下载PDF文件 查看货源
内容描述: NPN 9 GHz宽带晶体管 [NPN 9 GHz wideband transistor]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
文件页数/大小: 16 页 / 166 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
BFG540W  
BFG540W/X; BFG540W/XR  
NPN 9 GHz wideband transistor  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
total power dissipation  
storage temperature  
junction temperature  
CONDITIONS  
open emitter  
MIN.  
MAX.  
20  
UNIT  
VCBO  
VCES  
VEBO  
IC  
V
V
V
RBE = 0  
15  
open collector  
2.5  
120  
500  
+150  
175  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
up to Ts = 85 °C; see Fig.3; note 1  
65  
°C  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to soldering point  
CONDITIONS  
VALUE  
180  
UNIT  
K/W  
Rth j-s  
up to Ts = 85 °C; note 1  
Note to the “Limiting values” and “Thermal characteristics”  
1. Ts is the temperature at the soldering point of the collector pin.  
MBG248  
600  
handbook, halfpage  
P
tot  
(mW)  
400  
200  
0
0
50  
100  
150  
200  
o
T
( C)  
s
VCE 10 V.  
Fig.3 Power derating curve.  
1997 Dec 04  
3