Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
TYP.
MAX.
UNIT
V(BR)CBO collector-base breakdown
voltage
open emitter; IC = 10 µA ; IE = 0
−
−
−
−
−
V
V(BR)CES
collector-emitter breakdown
voltage
RBE = 0; IC = 40 µA
15
−
−
V
V(BR)EBO emitter-base breakdown
voltage
open collector; IE = 100 µA; IC = 0
2.5
V
ICBO
hFE
fT
collector cut-off current
DC current gain
open emitter; VCB = 8 V; IE = 0
IC = 40 mA; VCE = 8 V
−
50
250
−
nA
60
−
120
9
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
GHz
Tamb = 25 °C
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
−
−
−
−
0.9
2
−
−
−
−
pF
pF
pF
dB
Ce
Cre
GUM
0.5
16
maximum unilateral power
gain; note 1
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
−
10
−
dB
Tamb = 25 °C
|s21|2
F
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz; 14
Tamb = 25 °C
15
−
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz
−
−
−
−
1.3
1.9
2.1
21
1.8
2.4
−
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz
dB
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; f = 900 MHz;
−
dBm
RL = 50 Ω; Tamb = 25 °C
ITO
Vo
third order intercept point
output voltage
note 2
note 3
note 4
−
−
−
34
−
−
−
dBm
mV
dB
500
−50
d2
second order intermodulation
distortion
Notes
2
s21
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C;
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
a) fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3. dim = −60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; VCE = 8 V; IC = 40 mA;
a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 Ω; Tamb = 25 °C;
a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
1997 Dec 04
4
NXP [ NXP ]
