Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MBB292
MBB293
handbook, halfpage
45
d im
handbook, halfpage
45
d im
(dB)
50
(dB)
50
55
55
60
60
65
65
70
20
40
60
80
100
120
I C (mA)
70
20
40
60
80
100
120
I C (mA)
V
CE
= 10 V; V
o
= 900 mV; T
amb
= 25
°C;
f
(p+q−r)
= 443.25 MHz.
V
CE
= 10 V; V
o
= 850 mV; T
amb
= 25
°C;
f
(p+q−r)
= 793.25 MHz.
Fig.8
Intermodulation distortion as a function of
collector current.
Fig.9
Intermodulation distortion as a function of
collector current.
MBB291
MBB290
handbook, halfpage
45
d2
handbook, halfpage
45
d2
(dB)
50
(dB)
50
55
55
60
60
65
65
70
20
40
60
80
100
120
I C (mA)
70
20
40
60
80
100
120
I C (mA)
V
CE
= 10 V; V
o
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 450 MHz.
V
CE
= 10 V; V
o
= 50 dBmV; T
amb
= 25
°C
f
(p+q)
= 810 MHz.
Fig.10 Second order intermodulation distortion as
a function of collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 13
7
PHILIPS [ NXP SEMICONDUCTORS ]
