Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 100 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°C
V
o
d
2
output voltage
second order intermodulation
distortion
note 1
note 2
I
C
= 90 mA; V
CE
= 10 V;
V
O
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 450 MHz;
f
p
= 50 MHz; f
q
= 400 MHz
I
C
= 90 mA; V
CE
= 10 V;
V
O
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 810 MHz;
f
p
= 250 MHz; f
q
= 560 MHz
Notes
1. d
im
=
−60
dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 445.25 MHz;
V
q
= V
o
−6
dB; f
q
= 453.25 MHz;
V
r
= V
o
−6
dB; f
r
= 455.25 MHz;
measured at f
(p+q−r)
= 443.25 MHz.
2. d
im
=
−60
dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
MIN.
−
80
−
−
−
−
−
−
−
−
−
TYP.
−
130
2
7
1.2
7
16
12
900
850
−58
PARAMETER
thermal resistance from junction to soldering
point
CONDITIONS
up to T
s
= 145
°C
(note 1)
BFG135
THERMAL
RESISTANCE
30 K/W
MAX.
1
−
−
−
−
−
−
−
−
−
−
UNIT
µA
pF
pF
pF
GHz
dB
dB
mV
mV
dB
−
−53
−
dB
1995 Sep 13
3
PHILIPS [ NXP SEMICONDUCTORS ]
