Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA949
MEA950
handbook, halfpage
10
handbook, halfpage
10
Zi
(Ω)
8
ri
Zi
(Ω)
8
ri
6
xi
6
xi
4
4
2
2
0
0
0.5
1
P
(W)
OUT
1.5
0
0
0.5
1
P
(W)
OUT
1.5
V
CE
= 10 V; f = 900 MHz.
V
CE
= 12.5 V; f = 900 MHz.
Fig.16 Input impedance as a function of output
power.
Fig.17 Input impedance as a function of output
power.
MEA947
MEA945
handbook, halfpage
80
handbook, halfpage
1.5
η
(%)
70
V
=
CE
12.5 V
7.5 V
60
10 V
V
P OUT
(W)
=
CE
12.5 V
10 V
1
7.5 V
0.5
50
40
0
0.5
1
POUT (W) 1.5
0
0
100
200
P IN (mW)
300
f = 900 MHz.
f = 900 MHz.
Fig.18 Efficiency as a function of output power.
Fig.19 Output power as a function of input power.
1995 Sep 13
9
PHILIPS [ NXP SEMICONDUCTORS ]
