NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
emitter capacitance
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
I
C
= 200
A;
V
CE
= 5 V;
R
S
= 2 k; f = 1 kHz;
B = 200 Hz
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 10
A
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
A
nA
I
EBO
h
FE
-
-
-
V
CE
= 5 V; I
C
= 2 mA
110
110
200
420
-
-
-
-
580
-
100
-
-
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
-
11
2
-
-
-
800
220
450
800
200
400
-
-
700
770
-
1.5
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
[1]
[2]
Pulse test: t
p
300
s;
= 0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC847_SER
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
5 of 18
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