NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off current
Conditions
I
E
= 0 A; V
CB
= 20 V
I
E
= 0 A; V
CB
= 20 V;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC817; BC817W; BC337
BC817-16; BC817-16W;
BC337-16
BC817-25; BC817-25W;
BC337-25
BC817-40; BC817-40W;
BC337-40
h
FE
V
CEsat
V
BE
C
c
f
T
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
Min
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
3
-
Max
100
5
100
600
250
400
600
-
700
1.2
-
-
Unit
nA
μA
nA
I
C
= 0 A; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V
100
100
160
250
I
C
= 500 mA; V
CE
= 1 V
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 1 V
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
40
-
-
-
100
mV
V
pF
MHz
[1]
[2]
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
PHILIPS [ NXP SEMICONDUCTORS ]
