NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
1.2
I
C
(A)
0.8
(5)
(4)
(3)
006aaa140
1.2
I
C
(A)
0.8
(6)
(5)
(4)
(3)
006aaa141
(2)
(1)
(2)
(1)
(6)
(7)
(8)
(7)
(8)
(9)
(9)
0.4
(10)
0.4
(10)
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
T
amb
= 25
°C
(1) I
B
= 16.0 mA
(2) I
B
= 14.4 mA
(3) I
B
= 12.8 mA
(4) I
B
= 11.2 mA
(5) I
B
= 9.6 mA
(6) I
B
= 8.0 mA
(7) I
B
= 6.4 mA
(8) I
B
= 4.8 mA
(9) I
B
= 3.2 mA
(10) I
B
= 1.6 mA
T
amb
= 25
°C
(1) I
B
= 13.0 mA
(2) I
B
= 11.7 mA
(3) I
B
= 10.4 mA
(4) I
B
= 9.1 mA
(5) I
B
= 7.8 mA
(6) I
B
= 6.5 mA
(7) I
B
= 5.2 mA
(8) I
B
= 3.9 mA
(9) I
B
= 2.6 mA
(10) I
B
= 1.3 mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
9 of 19
PHILIPS [ NXP SEMICONDUCTORS ]
