NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
BC817
BC817W
BC337
T
stg
T
j
T
amb
[1]
[2]
Conditions
open emitter
open base;
I
C
= 10 mA
open collector
Min
-
-
-
-
-
-
Max
50
45
5
500
1
200
250
200
625
+150
150
+150
Unit
V
V
V
mA
A
mA
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BC817
BC817W
BC337
[1]
[2]
Conditions
Min
Typ
Max
Unit
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
-
-
-
-
-
-
500
625
200
K/W
K/W
K/W
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
4 of 19
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