NXP Semiconductors
Product data sheet
Low-leakage double diode
FEATURES
•
Plastic SMD package
•
Low leakage current: typ. 3 pA
•
Switching time: typ. 0.8
µs
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
APPLICATION
•
Low-leakage current applications in
surface mounted circuits.
2
2
1
BAV199
PINNING
MARKING
CODE
JY∗
PIN
1
2
3
DESCRIPTION
anode
cathode
anode; cathode
MARKING
TYPE NUMBER
BAV199
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
handbook, 4 columns
1
3
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
3
Top view
MAM107
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
square wave; T
j
= 25
°C
prior to surge;
see Fig.4
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
Note
1. Device mounted on a FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
−
−
−
−
−
85
75
160
140
500
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Oct 12
2
PHILIPS [ NXP SEMICONDUCTORS ]
