NXP Semiconductors
Product data sheet
Low-leakage double diode
GRAPHICAL DATA
BAV199
handbook, halfpage
300
MLB756
handbook, halfpage
300
MLB752 - 1
IF
(mA)
200
IF
(mA)
200
(1)
(2)
(3)
single diode loaded
100
100
double diode loaded
0
0
100
T amb (
o
C)
200
0
0
0.4
0.8
1.2
V F (V)
1.6
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Device mounted on a FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage; per diode.
handbook, full pagewidth
10
2
MBG704
IFSM
(A)
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents; T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
2001 Oct 12
4
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