Philips Semiconductors
Product specification
Hex inverter
74HC04; 74HCT04
DC CHARACTERISTICS
Type 74HC04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
OTHER
VCC (V)
Tamb = 25 °C
VIH
HIGH-level input voltage
LOW-level input voltage
2.0
1.5
1.2
−
−
−
V
V
V
V
V
V
4.5
6.0
2.0
4.5
6.0
3.15
4.2
−
2.4
3.2
0.8
2.1
2.8
VIL
0.5
−
1.35
1.8
−
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
IO = −20 µA
IO = −4.0 mA
IO = −20 µA
IO = −5.2 mA
2.0
4.5
4.5
6.0
6.0
1.9
2.0
−
−
−
−
−
V
V
V
V
V
4.4
4.5
3.98
5.9
4.32
6.0
5.48
5.81
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
2.0
4.5
4.5
6.0
6.0
6.0
6.0
−
−
−
−
−
−
−
0
0.1
V
V
V
V
V
IO = 20 µA
0
0.1
IO = 4.0 mA
IO = 20 µA
0.15
0
0.26
0.1
IO = 5.2 mA
VI = VCC or GND
0.16
0.1
−
0.26
±0.1
±.0.5
ILI
input leakage current
µA
µA
IOZ
3-state output OFF current VI = VIH or VIL;
VO = VCC or GND
ICC
quiescent supply current
VI = VCC or GND; IO = 0 6.0
−
−
2
µA
2003 Jul 23
6
NXP [ NXP ]
