Philips Semiconductors
Product specification
Hex inverter
74HC04; 74HCT04
RECOMMENDED OPERATING CONDITIONS
74HC04
TYP. MAX. MIN.
74HCT04
UNIT
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
2.0
TYP. MAX.
VCC
VI
5.0
−
6.0
4.5
0
5.0
5.5
V
V
V
input voltage
0
VCC
VCC
−
VCC
VCC
VO
output voltage
0
−
0
−
Tamb
ambient temperature
see DC and AC
characteristics per
device
−40
+25
+125 −40
+25
+125 °C
tr, tf
input rise and fall times
VCC = 2.0 V
VCC = 4.5 V
−
−
−
−
1000
500
−
−
−
−
−
ns
ns
ns
6.0
−
6.0
−
500
−
VCC = 6.0 V
400
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.5
MAX.
+7.0
UNIT
VCC
IIK
V
input diode current
output diode current
VI < −0.5 V or VI > VCC + 0.5 V
VO < −0.5 V or VO > VCC + 0.5 V
−0.5 V < VO < VCC + 0.5 V
−
−
−
±20
±20
±25
mA
mA
mA
IOK
IO
output source or sink
current
I
CC, IGND VCC or GND current
−
±50
mA
Tstg
Ptot
storage temperature
power dissipation
DIP14 package
−65
+150
°C
T
amb = −40 to +125 °C; note 1
−
−
750
500
mW
mW
other packages
Tamb = −40 to +125 °C; note 2
Notes
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
2003 Jul 23
5
NXP [ NXP ]
