NXP Semiconductors
74HC04; 74HCT04
Hex inverter
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see
Symbol Parameter
Conditions
Min
74HC04
t
pd
propagation delay nA to nY; see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
74HCT04
t
pd
propagation delay nA to nY; see
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
t
t
C
PD
transition time
power dissipation
capacitance
V
CC
= 4.5 V; see
per package;
V
I
= GND to V
CC
1.5 V
25
C
Typ
Max
40 C
to +125
C
Unit
Max
(85
C)
Max
(125
C)
-
-
-
-
-
-
-
25
9
7
7
19
7
6
21
85
17
-
14
75
15
13
-
105
21
-
18
95
19
16
-
130
26
-
22
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
power dissipation
capacitance
per package; V
I
= GND to V
CC
-
-
-
-
-
10
8
7
24
19
-
15
-
24
-
19
-
29
-
22
-
ns
ns
ns
pF
[1]
[2]
[3]
t
pd
is the same as t
PHL
and t
PLH
.
t
t
is the same as t
THL
and t
TLH
.
C
PD
is used to determine the dynamic power dissipation (P
D
in
W):
P
D
= C
PD
V
CC2
f
i
N +
(C
L
V
CC2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC2
f
o
) = sum of outputs.
74HC_HCT04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 3 August 2012
6 of 17
PHILIPS [ NXP SEMICONDUCTORS ]
