Philips Semiconductors
Product specification
Quad 2-input NAND gate
DC CHARACTERISTICS FOR 74HCT
74HC/HCT03
For the DC characteristics see
“74HC/HCT/HCU/HCMOS Logic Family Specifications”,
except that the V
OH
values are
not valid for open drain. They are replaced by I
OZ
as given below.
Output capability: standard (open drain), excepting V
OH
I
CC
category: SSI
Voltages are referenced to GND (ground = 0 V)
T
amb
(°C)
74HCT
SYMBOL PARAMETER
+25
min. typ.
I
OZ
Note
1. The maximum operating output voltage (V
O(max)
) is 6.0 V.
Note to HCT types
The value of additional quiescent supply current (∆I
CC
) for a unit load of 1 is given in the family specifications.
To determine
∆I
CC
per input, multiply this value by the unit load coefficient shown in the table below.
HIGH level output
leakage current
max.
0.5
−40
to +85
min.
max.
5.0
−40
to +125
min. max.
10.0
µA
4.5
to
5.5
V
IL
V
O
= V
O(max)(1)
or GND
UNIT V
CC
(V)
V
I
OTHER
TEST CONDITIONS
INPUT
nA, nB
UNIT LOAD COEFFICIENT
1.0
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF
T
amb
(°C)
74HCT
SYMBOL PARAMETER
+25
min. typ.
t
PZL
/ t
PLZ
t
THL
propagation delay
nA, nB, to nY
output transition time
12
7
max.
24
15
−40
to +85
min. max.
30
19
−40
to +125
min.
max.
36
22
ns
ns
4.5
4.5
Fig.6
Fig.6
UNIT
V
CC
WAVEFORMS
(V)
TEST CONDITIONS
December 1990
6
PHILIPS [ NXP SEMICONDUCTORS ]
