Philips Semiconductors
Product specification
Quad 2-input NAND gate
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Voltages are referenced to GND (ground = 0 V)
SYMBOL
V
CC
V
O
I
IK
−I
OK
−I
O
±I
CC
;
±I
GND
T
stg
P
tot
PARAMETER
DC supply voltage
DC output voltage
DC input diode current
DC output diode current
DC output sink current
DC VCC or GND current
storage temperature range
power dissipation per package
plastic DIL
plastic mini-pack (SO)
750
500
mW
mW
−65
MIN.
−0.5
−0.5
MAX.
+7
+7
20
20
25
50
+150
UNIT
V
V
mA
mA
mA
mA
°C
CONDITIONS
74HC/HCT03
for V
I
< −0.5
V or V
I
>
V
CC
+ 0.5 V
for V
O
< −0.5
V
for
−
0.5 V
<
V
O
for temperature range;
−40
to +125
°C
74HC/HCT
above +70
°C:
derate linearly with 12 mW/K
above +70
°C:
derate linearly with 8 mW/K
December 1990
4
PHILIPS [ NXP SEMICONDUCTORS ]
