NXP Semiconductors
1PS66SB82; 1PS88SB82
15 V, 30 mA low C
d
Schottky barrier diodes
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT666
SOT363
[1]
Conditions
in free air
Min
Typ
Max
Unit
-
-
-
-
700
416
K/W
K/W
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOT363 (SC-88) standard mounting conditions.
[2]
[3]
[4]
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
see
I
F
= 1 mA
I
F
= 30 mA
I
R
r
dif
C
d
[1]
Min
-
-
-
-
-
Typ
-
-
-
12
1
Max
340
700
0.2
-
-
Unit
mV
mV
μA
Ω
pF
reverse current
differential
resistance
diode
capacitance
V
R
= 1 V; see
I
F
= 5 mA; f = 1 kHz;
see
V
R
= 0 V; f = 1 MHz;
see
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
1PS66SB82_1PS88SB82_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 13 January 2010
3 of 10
PHILIPS [ NXP SEMICONDUCTORS ]
