Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
CONDITIONS
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-79 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
continuous reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.3
V
R
= 1 V; f = 1 MHz; see Fig.4
240
320
400
500
800
2
10
1PS79SB10
MAX.
UNIT
mV
mV
mV
mV
mV
µA
pF
VALUE
450
UNIT
K/W
1998 Jul 16
3
PHILIPS [ NXP SEMICONDUCTORS ]
