Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Ultra small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
1PS79SB10
Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
package.
handbook, halfpage
k
Marking code:
F.
Top view
a
MAM403
Fig.1 Simplified outline (SC-79) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
CONDITIONS
−
−
−
−
−65
−
−65
MIN.
MAX.
30
200
300
600
+150
125
+125
UNIT
V
mA
mA
mA
°C
°C
°C
1998 Jul 16
2
PHILIPS [ NXP SEMICONDUCTORS ]
