NXP Semiconductors
BAS70 series; 1PS7xSB70 series
General-purpose Schottky diodes
10
2
I
F
(mA)
10
mra803
10
2
I
R
(μA)
10
(1)
mra805
1
1
10
−1
10
−1
(1)
(2)
(3)
(4)
(2)
10
−2
(3)
10
−2
0
0.2
0.4
0.6
0.8
V
F
(V)
1
10
−3
0
20
40
60
V
R
(V)
80
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(4) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
10
3
mra802
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mra804
2
C
d
(pF)
1.5
r
dif
(Ω)
10
2
1
10
0.5
1
10
−1
1
10
I
F
(mA)
10
2
0
0
20
40
60
V
R
(V)
80
f = 10 kHz
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Differential forward resistance as a function of
forward current; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAS70_1PS7XSB70_SER_9
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 09 — 13 January 2010
7 of 20
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